EFFECTS OF INDIUM DOPING ON CRYSTALLINE QUALITIES OF GAAS ON SI BY MOLECULAR-BEAM EPITAXY

[1] DONOR NEUTRALIZATION IN GAAS(SI) BY ATOMIC-HYDROGEN [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 108 - 110

[2] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 992 - 994

[3] FISHER R, 1986, APPL PHYS LETT, V48, P1223, DOI DOI 10.1063/1.96988

[4] EVIDENCE BY RAMAN-SPECTROSCOPY AND X-RAY-DIFFRACTION OF A STRONG INFLUENCE OF H2O TRACES ON THE METALORGANIC VAPOR-PHASE EPITAXY OF GAAS ON SI [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1352 - 1354

[5] INOUE T, 1985, I PHYS C SER, V79, P7

[6] THE GROWTH OF GAAS ON SI BY MBE [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 205 - 213

[7] ELECTRICAL-PROPERTIES OF INDIUM DOPED GAAS-LAYERS GROWN BY MBE [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 314 - 318

[8] STABLE CONTINUOUS ROOM-TEMPERATURE LASER OPERATION OF ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN ON SI [J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 39 - 41

[9] OBSERVATIONS OF DEFECTS IN LPE GAAS REVEALED BY NEW CHEMICAL ETCHANT [J]. JOURNAL OF CRYSTAL GROWTH, 1979, 47 (03) : 434 - 436

[10] DISLOCATION REDUCTION IN GAAS ON SI BY THERMAL CYCLES AND INGAAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (12): : L1950 - L1952

[1] DONOR NEUTRALIZATION IN GAAS(SI) BY ATOMIC-HYDROGEN [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 108 - 110

[2] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 992 - 994

[3] FISHER R, 1986, APPL PHYS LETT, V48, P1223, DOI DOI 10.1063/1.96988

[4] EVIDENCE BY RAMAN-SPECTROSCOPY AND X-RAY-DIFFRACTION OF A STRONG INFLUENCE OF H2O TRACES ON THE METALORGANIC VAPOR-PHASE EPITAXY OF GAAS ON SI [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1352 - 1354

[5] INOUE T, 1985, I PHYS C SER, V79, P7

[6] THE GROWTH OF GAAS ON SI BY MBE [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 205 - 213

[7] ELECTRICAL-PROPERTIES OF INDIUM DOPED GAAS-LAYERS GROWN BY MBE [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 314 - 318

[8] STABLE CONTINUOUS ROOM-TEMPERATURE LASER OPERATION OF ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN ON SI [J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 39 - 41

[9] OBSERVATIONS OF DEFECTS IN LPE GAAS REVEALED BY NEW CHEMICAL ETCHANT [J]. JOURNAL OF CRYSTAL GROWTH, 1979, 47 (03) : 434 - 436

[10] DISLOCATION REDUCTION IN GAAS ON SI BY THERMAL CYCLES AND INGAAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (12): : L1950 - L1952