OBSERVATIONS OF DEFECTS IN LPE GAAS REVEALED BY NEW CHEMICAL ETCHANT

被引:19
作者
NISHIZAWA, J
OYAMA, Y
TADANO, H
INOKUCHI, K
OKUNO, Y
机构
[1] Research Institute of Electrical Communication, Tohoku University, Sendai
关键词
D O I
10.1016/0022-0248(79)90211-2
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The behavior of dislocations in the interfacial region between the epitaxial layer grown from the liquid phase and the substrate of GaAs is investigated. Observations of dislocations lying along the 〈110〉 directions were carried out using an optical microscope after shallow etching with a new chemical etchant. The dislocations are traced by the repetition of etching from epitaxial layer to the interface. The results show that dislocations in the substrates are expected to bend along the direction normal to the epitaxial growth direction at the interface. © 1979.
引用
收藏
页码:434 / 436
页数:3
相关论文
共 6 条