LIQUID-PHASE EPITAXY OF GAP BY A TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR-PRESSURE

被引：78

作者：

NISHIZAWA, JI

OKUNO, Y

机构：

[1] TOHOKU UNIV,RES INST ELECT COMMUN,SENDAI,JAPAN

[2] SEMICONDUCTOR RES FDN,SENDAI,JAPAN

来源：

关键词：

D O I：

10.1109/T-ED.1975.18209

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：716 / 721

页数：6

共 7 条

[1] PROPERTIES OF SN-DOPED GAAS
NISHIZAW.J
SHINOZAK.S
ISHIDA, K
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) : 1638 - 1645
[2] HEAT-TREATMENT OF GALLIUM-PHOSPHIDE
NISHIZAWA, J
OKUNO, Y
SUTO, K
SATO, T
YAMOKOSHI, S
[J]. SOLID STATE COMMUNICATIONS, 1974, 14 (10) : 889 - 892
[3] NISHIZAWA J, 1972, OYO BUTSURI, V41, P912
[4] NISHIZAWA J, 1974, SSD7425 IECE JAP TEC
[5] NISHIZAWA J, 1974, EFM743 IECE JAP TEC
[6] NONSTOICHIOMETRY OF TE-DOPED GAAS
NISHIZAWA, JI
OTSUKA, H
YAMAKOSHI, S
ISHIDA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (01) : 46 - 56
[7] SURFACE MORPHOLOGY OF LIQUID-PHASE EPITAXIAL LAYERS
SAUL, RH
ROCCASECCA, DD
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) : 1983 - 1988