STABLE CONTINUOUS ROOM-TEMPERATURE LASER OPERATION OF ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN ON SI

被引：15

作者：

NAM, DW

HOLONYAK, N

HSIEH, KC

KALISKI, RW

LEE, JW

SHICHIJO, H

EPLER, JE

BURNHAM, RD

PAOLI, TL

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265

[3] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 01期

关键词：

D O I：

10.1063/1.98879

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：39 / 41

页数：3

共 11 条

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[2] STIMULATED-EMISSION IN STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURES [J].

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[3] PHOTOPUMPED LOW THRESHOLD ALX'GA1-X'AS-ALX'GA1-X'AS-ALXGA1-XAS(X'-APPROXIMATELY-0.85,X'-APPROXIMATELY-0.3,X=0) SINGLE QUANTUM WELL LASERS [J].

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[5] LOW-THRESHOLD HIGH-EFFICIENCY ALGAAS-GAAS DOUBLE-HETEROSTRUCTURE INJECTION-LASERS GROWN ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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[6]

DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1

[7] QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :170-186

[8] CONTINUOUS (300 K) PHOTOPUMPED LASER OPERATION OF ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN ON STRAINED-LAYER GAAS ON SI [J].

KALISKI, RW ;

HOLONYAK, N ;

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CHUNG, HF .

APPLIED PHYSICS LETTERS, 1987, 50 (13) :836-838

[9]

LEE JW, 1987, I PHYS C SER, V83, P111

[10] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF III-V SEMICONDUCTORS [J].

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