CONTINUOUS (300 K) PHOTOPUMPED LASER OPERATION OF ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN ON STRAINED-LAYER GAAS ON SI

被引：21

作者：

KALISKI, RW

HOLONYAK, N

HSIEH, KC

NAM, DW

LEE, JW

SHICHIJO, H

BURNHAM, RD

EPLER, JE

CHUNG, HF

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

[2] TEXAS INSTRUMENTS INC,CENT RES LAB,DALLAS,TX 75265

[3] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 13期

关键词：

D O I：

10.1063/1.98006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：836 / 838

页数：3

共 9 条

[1] LOW THRESHOLD PHOTOPUMPED ALXGA1-XAS QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

BURNHAM, RD ;

STREIFER, W ;

SCIFRES, DR ;

HOLONYAK, N ;

HESS, K ;

CAMRAS, MD .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2618-2622

[2] STIMULATED-EMISSION IN STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURES [J].

CAMRAS, MD ;

BROWN, JM ;

HOLONYAK, N ;

NIXON, MA ;

KALISKI, RW ;

LUDOWISE, MJ ;

DIETZE, WT ;

LEWIS, CR .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6183-6189

[3] PHOTOPUMPED LOW THRESHOLD ALX'GA1-X'AS-ALX'GA1-X'AS-ALXGA1-XAS(X'-APPROXIMATELY-0.85,X'-APPROXIMATELY-0.3,X=0) SINGLE QUANTUM WELL LASERS [J].

CAMRAS, MD ;

HOLONYAK, N ;

NIXON, MA ;

BURNHAM, RD ;

STREIFER, W ;

SCIFRES, DR ;

PAOLI, TL ;

LINDSTROM, C .

APPLIED PHYSICS LETTERS, 1983, 42 (09) :761-763

[4]

CASEY HC, 1978, HETEROSTRUCTURE LA B, P287

[5] OPTIMIZATION OF HYDRAZINE-WATER SOLUTION FOR ANISOTROPIC ETCHING OF SILICON IN INTEGRATED-CIRCUIT TECHNOLOGY [J].

DECLERCQ, MJ ;

GERZBERG, L ;

MEINDL, JD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (04) :545-552

[6] LOW-THRESHOLD HIGH-EFFICIENCY ALGAAS-GAAS DOUBLE-HETEROSTRUCTURE INJECTION-LASERS GROWN ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

VANDERZIEL, JP ;

LOGAN, RA ;

BROWN, JM ;

PINZONE, CJ .

APPLIED PHYSICS LETTERS, 1987, 50 (07) :407-409

[7] QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

HOLONYAK, N ;

KOLBAS, RM ;

DUPUIS, RD ;

DAPKUS, PD .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :170-186

[8]

LEE JW, 1986, 13TH INT S GAAS REL

[9]

THOMPSON GHB, 1980, PHYSICS SEMICONDUCTO, P25

← 1 →