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IMPURITY DOPING EFFECT ON THE DISLOCATION DENSITY IN GAAS ON SI (100) GROWN BY MIGRATION-ENHANCED EPITAXY

被引：15
作者：
NOZAWA, K
HORIKOSHI, Y
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 11期
关键词：
D O I：
10.1143/JJAP.28.L1877
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L1877 / L1879
页数：3
相关论文
共 14 条
[11]   CONTROLLED FORMATION OF MISFIT DISLOCATIONS FOR HETEROEPITAXIAL GROWTH OF GAAS ON (100) SI BY MIGRATION-ENHANCED EPITAXY [J].
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (06) :L1140-L1143
[12]   INITIAL GROWTH-CONDITIONS OF GAAS ON (100)SI GROWN BY MIGRATION-ENHANCED EPITAXY [J].
STOLZ, W ;
NAGANUMA, M ;
HORIKOSHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (03) :L283-L286
[13]   EFFECTS OF THE SUBSTRATE OFFSET ANGLE ON THE GROWTH OF GAAS ON SI SUBSTRATE [J].
UEDA, T ;
NISHI, S ;
KAWARADA, Y ;
AKIYAMA, M ;
KAMINISHI, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (09) :L789-L791
[14]   STRUCTURAL-PROPERTIES OF GAAS-ON-SI WITH INGAAS/GAAS STRAINED-LAYER SUPERLATTICE [J].
WATANABE, Y ;
KADOTA, Y ;
OKAMOTO, H ;
SEKI, M ;
OHMACHI, Y .
JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :459-465
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