THREADING DISLOCATION DENSITY REDUCTION IN GAAS ON SI SUBSTRATES

被引：15

作者：

NISHIOKA, T ^{[1
]}

ITOH, Y ^{[1
]}

SUGO, M ^{[1
]}

YAMAMOTO, A ^{[1
]}

YAMAGUCHI, M ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 12期

关键词：

D O I：

10.1143/JJAP.27.L2271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2271 / L2273

页数：3

共 10 条

[1] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J].

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[2] DISLOCATION REDUCTION IN EPITAXIAL GAAS ON SI (100) [J].

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[4]

ISHIDA K, 1986, JPN J APPL PHYS 2, V25, pL288, DOI 10.1143/JJAP.25.L288

[5] MISFIT AND THREADING DISLOCATIONS IN GAAS-LAYERS GROWN ON SI SUBSTRATES BY MOCVD [J].

ISHIDA, K ;

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[6] DEFECTS ASSOCIATED WITH ACCOMMODATION OF MISFIT BETWEEN CRYSTALS [J].

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[7]

MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[8]

NISHIOKA T, 1987, P MATERIAL RES SOC, V77, P791

[9] CORRECTION [J].

PEOPLE, R .

APPLIED PHYSICS LETTERS, 1986, 49 (04) :229-229

[10] CALCULATION OF CRITICAL LAYER THICKNESS VERSUS LATTICE MISMATCH FOR GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J].

PEOPLE, R ;

BEAN, JC .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :322-324

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