PROPERTIES OF GAAS ON SI GROWN BY MOLECULAR-BEAM EPITAXY

[1] AKIYAMA M, 1986, 1986 P MRS SPRING M

[2] PERFORMANCE OF QUARTER-MICRON GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (24) : 1654 - 1655

[3] HIGH-PERFORMANCE SELF-ALIGNED GATE (AL,GA)AS/GAAS MODFETS ON MBE LAYERS GROWN ON (100) SILICON SUBSTRATES [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) : 635 - 637

[4] CHEMICAL ETCHING AND CLEANING PROCEDURES FOR SI, GE, AND SOME III-V COMPOUND SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (04) : 316 - 318

[5] BIATOMIC STEPS ON (001) SILICON SURFACES [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (24) : 3054 - 3057

[6] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 815 - 817

[7] CONTAMINANTS ON CHEMICALLY ETCHED SILICON SURFACES - LEED-AUGER METHOD [J]. SURFACE SCIENCE, 1970, 23 (02) : 283 - &

[8] CONTINUOUS-WAVE OPERATION OF EXTREMELY LOW-THRESHOLD GAAS/ALGAAS BROAD-AREA INJECTION-LASERS ON (100) SI SUBSTRATES AT ROOM-TEMPERATURE [J]. OPTICS LETTERS, 1987, 12 (10) : 812 - 813

[9] HIGH-FREQUENCY MODULATION OF ALGAAS/GAAS LASERS GROWN ON SI SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (08) : 605 - 606

[10] CHEN HZ, 1987, TECH DIG IDEM, P238

[1] AKIYAMA M, 1986, 1986 P MRS SPRING M

[2] PERFORMANCE OF QUARTER-MICRON GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (24) : 1654 - 1655

[3] HIGH-PERFORMANCE SELF-ALIGNED GATE (AL,GA)AS/GAAS MODFETS ON MBE LAYERS GROWN ON (100) SILICON SUBSTRATES [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) : 635 - 637

[4] CHEMICAL ETCHING AND CLEANING PROCEDURES FOR SI, GE, AND SOME III-V COMPOUND SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (04) : 316 - 318

[5] BIATOMIC STEPS ON (001) SILICON SURFACES [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (24) : 3054 - 3057

[6] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 815 - 817

[7] CONTAMINANTS ON CHEMICALLY ETCHED SILICON SURFACES - LEED-AUGER METHOD [J]. SURFACE SCIENCE, 1970, 23 (02) : 283 - &

[8] CONTINUOUS-WAVE OPERATION OF EXTREMELY LOW-THRESHOLD GAAS/ALGAAS BROAD-AREA INJECTION-LASERS ON (100) SI SUBSTRATES AT ROOM-TEMPERATURE [J]. OPTICS LETTERS, 1987, 12 (10) : 812 - 813

[9] HIGH-FREQUENCY MODULATION OF ALGAAS/GAAS LASERS GROWN ON SI SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (08) : 605 - 606

[10] CHEN HZ, 1987, TECH DIG IDEM, P238