PROPERTIES OF GAAS ON SI GROWN BY MOLECULAR-BEAM EPITAXY

[11] EPITAXY BY PERIODIC ANNEALING [J]. SURFACE SCIENCE, 1969, 17 (02) : 494 - &

[12] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 992 - 994

[13] MONOLITHIC INTEGRATION OF SI MOSFETS AND GAAS-MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) : 241 - 243

[14] MONOLITHIC INTEGRATION OF GAAS/ALGAAS DOUBLE-HETEROSTRUCTURE LEDS AND SI MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) : 500 - 502

[15] GAAS-MESFETS FABRICATED ON MONOLITHIC GAAS/SI SUBSTRATES [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) : 207 - 208

[16] GROWTH OF HIGH-QUALITY GAAS-LAYERS DIRECTLY ON SI SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 815 - 818

[17] SURFACE-TREATMENT OF (1102) SAPPHIRE AND (100) SILICON FOR MOLECULAR-BEAM EPITAXIAL-GROWTH [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 796 - 798

[18] ALGAAS GAAS MULTIPLE QUANTUM WELL REFLECTION MODULATORS GROWN ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1988, 53 (02) : 94 - 96

[19] EAGLESHAW D, 1987, COMMUNICATION

[20] III-V SEMICONDUCTORS ON SI SUBSTRATES - NEW DIRECTIONS FOR HETEROJUNCTION ELECTRONICS [J]. SOLID-STATE ELECTRONICS, 1986, 29 (02) : 269 - 271

[11] EPITAXY BY PERIODIC ANNEALING [J]. SURFACE SCIENCE, 1969, 17 (02) : 494 - &

[12] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 992 - 994

[13] MONOLITHIC INTEGRATION OF SI MOSFETS AND GAAS-MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) : 241 - 243

[14] MONOLITHIC INTEGRATION OF GAAS/ALGAAS DOUBLE-HETEROSTRUCTURE LEDS AND SI MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) : 500 - 502

[15] GAAS-MESFETS FABRICATED ON MONOLITHIC GAAS/SI SUBSTRATES [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) : 207 - 208

[16] GROWTH OF HIGH-QUALITY GAAS-LAYERS DIRECTLY ON SI SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 815 - 818

[17] SURFACE-TREATMENT OF (1102) SAPPHIRE AND (100) SILICON FOR MOLECULAR-BEAM EPITAXIAL-GROWTH [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 796 - 798

[18] ALGAAS GAAS MULTIPLE QUANTUM WELL REFLECTION MODULATORS GROWN ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1988, 53 (02) : 94 - 96

[19] EAGLESHAW D, 1987, COMMUNICATION

[20] III-V SEMICONDUCTORS ON SI SUBSTRATES - NEW DIRECTIONS FOR HETEROJUNCTION ELECTRONICS [J]. SOLID-STATE ELECTRONICS, 1986, 29 (02) : 269 - 271