Control of growth process and dislocation generation of GaAs1-xNx grown by all-solid-source molecular beam epitaxy

被引：11

作者：

Fujimoto, Y ^{[1
]}

Yonezu, H ^{[1
]}

Momose, K ^{[1
]}

Utsumi, A ^{[1
]}

Furukawa, Y ^{[1
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

defects; molecular beam epitaxy; nitrides; semiconducting gallium aresenide;

D O I：

10.1016/S0022-0248(01)00754-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigated the growth process and dislocation generation of GaAs1-xNx alloys grown on GaAs by solid-source molecular beam epitaxy (MBE). It was found that the GaAs1-xNx alloys with a mirror-like surface can be grown by lowering the arsenic-to-gallium flux ratio compared to that in the growth of GaAs. The nitrogen composition in the GaAs1-xNx alloys increased with decreasing substrate temperature and with increasing RF-power. As the nitrogen composition increased, the misfit dislocations were observed at the GaAs1-xNx-GaAs heterointerface. It was clarified that the propagation of dislocations was suppressed in GaAs1-xNx alloys by adding nitrogen. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：491 / 495

页数：5

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