Metalorganic vapor phase epitaxial growth of GaNAs using tertiarybutylarsine (TBA) and dimethylhydrazine (DMHy)

GaNAs alloys were successfully grown on GaAs substrates by low-pressure metalorganic vapor phase epitaxy (MOVPE) with all organometallic sources of triethylgallium (TEG), tertiarybutylarsine (TBA), and dimethylhydrazine (DMHy). For nitrogen, the desorption coefficient of 30 kcal/mol was derived from the nitrogen incorporation dependence on growth temperature. Since the nitrogen concentration above 3% was easily achieved by our growth technique, the combination of TBA-DMHY as V precursors is a candidate for the growth of other III-V alloys containing nitrogen. We observed a decrease in PL intensity with enhancing nitrogen incorporation into solids. In order to recover from degradation of optical properties, rapid thermal annealing (RTA) was demonstrated and found to be effective. Therefore MOVPE using TBA-DMHy combined with postgrowth annealing is expected to obtain GaNAs alloys with high nitrogen concentration as well as excellent optical properties.