Growth of TlInGaAs on InP by gas-source molecular beam epitaxy

被引：9

作者：

Takenaka, K

Asahi, H

Koh, H

Asami, K

Gonda, S

Oe, K

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

[2] NTT, Opt Elect Labs, Kanagawa 2430124, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 2B期

关键词：

TlInGaAs; gas-source MBE; long-wavelength optical device; temperature-insensitive wavelength laser diode; X-ray diffraction; photoluminescence;

D O I：

10.1143/JJAP.38.1026

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

TlInGaAs quaternary layers are grown on InP substrates bg gas-source molecular beam epitaxy (MBE) for the first time. The application of TlInGaAs was proposed for long-wavelength optical devices as well as temperature-insensitive wavelength laser diodes. During the growth, RHEED (reflection high-energy electron diffraction) patterns show(2 x 2) reconstructions. Successful growth of TlInGaAs is confirmed with X-ray diffraction measurements. PL emission is observed and the temperature variation of PL peak energy is as small as 0.1 meV/K.

引用

页码：1026 / 1028

页数：3

共 11 条

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