Formation of β-SiC nanocrystals on Si(111) monocrystal during the HFCVD of diamond

被引：5

作者：

Le Normand, F ^{[1
]}

Arnault, JC ^{[1
]}

Pecoraro, S ^{[1
]}

Werckmann, J ^{[1
]}

机构：

[1] Inst Phys & Chim Strasbourg, IPCMS, GSI, Grp Surfaces Interfaces,UMR 7504, F-67037 Strasbourg, France

来源：

APPLIED SURFACE SCIENCE | 2001年 / 177卷 / 04期

关键词：

HFCVD; diamond; Si(111);

D O I：

10.1016/S0169-4332(01)00225-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this study thin Si(1 1 1) sample was prepared for top view observations by high resolution transmission electron microscopy (HRTEM). The very first steps of diamond nucleation on Si(1 1 1) by a HFCVD process are studied. We detect the polycrystalline growth of silicon carbide grains with a general pseudoepitaxic orientation SiC{2 2 0}//Si{2 2 0}. They are relied by disoriented SiC grains. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：298 / 302

页数：5

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