Gate-controlled light emitting diodes

被引：25

作者：

Namdas, Ebinazar B. ^{[1
]}

Swensen, James S. ^{[1
]}

Ledochowitsch, Peter ^{[1
]}

Yuen, Jonathan D. ^{[1
]}

Moses, Daniel ^{[1
]}

Heeger, Alan J. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Inst Polymers & Organ Solids, Santa Barbara, CA 93106 USA

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 07期

关键词：

D O I：

10.1002/adma.200701944

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The structure and operation of a gate-controlled LED is reported (see figure). The device is properly described as a unipolar organic transistor in series with an OLED. Light emission was visible with brightness exceeding 310cd m(-2) at external quantum efficiency of 0.5%; the brightness is controlled by the gate voltage.

引用

页码：1321 / +

页数：5

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