High-intensity terahertz pulses at 1-kHz repetition rate

被引:126
作者
Budiarto, E
Margolies, J
Jeong, S
Son, J
Bokor, J
机构
[1] UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA
[2] LG SEMICON, CHUNGJU, CHUNGCHUNGBUK, SOUTH KOREA
关键词
D O I
10.1109/3.538792
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the generation of terahertz pulses with 0.4-mu J pulse energy at 1-kHz repetition rate using a large-aperture GaAs photoconductor with 3-cm gap aluminum electrodes, biased at voltages up to 45 kV, The terahertz output energy saturates at a laser fluence of 40 mu J/cm(2) at low-bias fields, while no clear saturation point was observed at high-bias fields, The output was found to be dependent on the repetition rate: at high fluences, pulse energy at 1 kHz is higher than that at 100 Hz by as much as 60%. A study of the behavior of the terahertz pulse energy and pulsewidth as a function of the pulsewidth of the laser excitation was conducted and compared with theoretical predictions. Propagation properties of the terahertz beam were also characterized, leading to a focal spot size as small as 800 mu m at the focus of a 2.5-in focal length parabolic mirror.
引用
收藏
页码:1839 / 1846
页数:8
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