Recoils, flows and explosions: surface damage mechanisms in metals and semiconductors during 50 eV 50 keV ion bombardment

被引：42

作者：

Nordlund, K ^{[1
]}

Keinonen, J

Ghaly, M

Averback, RS

机构：

[1] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA

[2] Univ Helsinki, Accelerator Lab, FIN-00014 Helsinki, Finland

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 148卷 / 1-4期

基金：

芬兰科学院; 美国国家科学基金会;

关键词：

ion irradiation; surface damage; metals; semiconductors;

D O I：

10.1016/S0168-583X(98)00819-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We review some recent simulation results on mechanisms of damage production close to a surface during ion irradiation. The simulation work encompasses studies of several metals and semiconductors at irradiation energies ranging from a few tens of eVs to 50 keV. The results show that in dense metals the presence of a surface can dramatically enhance the damage production upto energies of at least 50 keV. The added damage is mostly in the form of vacancy clusters. which can extend quire jeep, similar to 10 nm, in the sample. In semiconductors. by contrast, the surface in general has little effect on the damage production in bulk. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：74 / 82

页数：9

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