Structure and stability of Ba-Cu-Ge type-I clathrates

被引:36
作者
Li, Y [1 ]
Chi, J [1 ]
Gou, WP [1 ]
Khandekar, S [1 ]
Ross, JH [1 ]
机构
[1] Texas A&M Univ, Dept Phys, College Stn, TX 77843 USA
关键词
D O I
10.1088/0953-8984/15/32/313
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have prepared samples of nominal type Ba8CuxGe46-x by induction melting and solid state reaction. Analysis shows that these materials form type-I clathrates, with a copper content between x = 4.9 and 5.3, nearly independent of the starting composition. We used x-ray powder diffraction and single-crystal electron diffraction to confirm the cubic type-I clathrate structure, while electron microprobe measurements confirmed the stability of the x;: 5 composition. This result differs from the corresponding Ag and Au clathrates and was not known previously due perhaps to the similar Cu and Ge form factors in x-ray diffraction. The observed composition adheres very tightly to a valence-counting scheme, in agreement with a Zintl-type stability mechanism. This implies a gap in the electronic density of states, also in contrast to the metallic behaviour of the Au and Ag analogues. Magnetization measurements showed a large diamagnetic response in the Ba-Cu-Ge clathrate. This behaviour is consistent with semiconducting or semimetallic behaviour and is similar to that of a number of intermetallic semiconductors.
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页码:5535 / 5542
页数:8
相关论文
共 30 条
[1]  
[Anonymous], 1988, Generalized structure analysis system
[2]   Structure and stability of the clathrates Ba8Ga16Ge30, Sr8Ga16Ge30, Ba8Ga16Si30, and Ba8In16Sn30 [J].
Blake, NP ;
Bryan, D ;
Latturner, S ;
Mollnitz, L ;
Stucky, GD ;
Metiu, H .
JOURNAL OF CHEMICAL PHYSICS, 2001, 114 (22) :10063-10074
[3]   Superconductivity in germanium clathrate Ba8Ga16Ge30 [J].
Bryan, JD ;
Srdanov, VI ;
Stucky, GD ;
Schmidt, D .
PHYSICAL REVIEW B, 1999, 60 (05) :3064-3067
[4]  
Carrillo-Cabrera W, 2000, Z KRIST-NEW CRYST ST, V215, P321
[5]   Glasslike heat conduction in high-mobility crystalline semiconductors [J].
Cohn, JL ;
Nolas, GS ;
Fessatidis, V ;
Metcalf, TH ;
Slack, GA .
PHYSICAL REVIEW LETTERS, 1999, 82 (04) :779-782
[6]   NEW TERNARY INTERMETALLIC COMPOUNDS WITH CLATHRATE STRUCTURE - BA8(T,SI)6SI40 AND BA6(T,GE)6GE40 WHERE T = NI, PD, PT, CU, AG, AU [J].
CORDIER, G ;
WOLL, P .
JOURNAL OF THE LESS-COMMON METALS, 1991, 169 (02) :291-302
[7]  
Gray D. E., 1972, American Institute of Physics Handbook, V3rd, P5
[8]   Low-density framework form of crystalline silicon with a wide optical band gap [J].
Gryko, J ;
McMillan, PF ;
Marzke, RF ;
Ramachandran, GK ;
Patton, D ;
Deb, SK ;
Sankey, OF .
PHYSICAL REVIEW B, 2000, 62 (12) :R7707-R7710
[9]   Superconductivity in silicon based barium-inclusion clathrates [J].
Herrmann, RFW ;
Tanigaki, K ;
Kuroshima, S ;
Suematsu, H .
CHEMICAL PHYSICS LETTERS, 1998, 283 (1-2) :29-32
[10]   Electronic structure of Si and Ge gold-doped clathrates [J].
Herrmann, RFW ;
Tanigaki, K ;
Kawaguchi, T ;
Kuroshima, S ;
Zhou, O .
PHYSICAL REVIEW B, 1999, 60 (19) :13245-13248