Measurement of the AlGaInAs/AlGaAs conduction-band offset using ballistic electron emission spectroscopy

被引:4
作者
Bhargava, S [1 ]
Zheng, C [1 ]
Ko, J [1 ]
Chin, MA [1 ]
Coldren, LA [1 ]
Narayanamurti, V [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
关键词
D O I
10.1063/1.122741
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ballistic electron emission spectroscopy (BEES) has been used to determine the conduction-band offset between a 10-nm-thick Al0.12In0.22Ga0.66As (Q) strained layer and a ternary Al0.2Ga0.8As(T) barrier located beneath the surface. A three- sample process was used so that the known, reproducible Au/GaAs Schottky barrier would be the top layer of all measured structures. BEES thresholds obtained for Au/GaAs, Au/GaAs/Q, and Au/GaAs/Q/T were 0.96 +/- 0.02, 0.98 +/- 0.04, and 1.08 +/- 0.04 meV yielding offsets of similar to 20 meV for GaAs/Q and similar to 100 meV for Q/T. Under the affect of a high-temperature anneal, the Q/T offset was reduced to similar to 40 meV. In addition, a structure employing solely Au/GaAs/AlGaAs was used to study transitivity for the Q/T material system. (C) 1998 American Institute of Physics. [S0003-6951(98)03548-7].
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页码:3271 / 3272
页数:2
相关论文
共 14 条
[1]   OBSERVATION OF INTERFACE BAND-STRUCTURE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY [J].
BELL, LD ;
KAISER, WJ .
PHYSICAL REVIEW LETTERS, 1988, 61 (20) :2368-2371
[2]   Fermi-level pinning position at the Au-InAs interface determined using ballistic electron emission microscopy [J].
Bhargava, S ;
Blank, HR ;
Narayanamurti, V ;
Kroemer, H .
APPLIED PHYSICS LETTERS, 1997, 70 (06) :759-761
[3]   MODIFICATION OF AL/GAAS(001) SCHOTTKY BARRIERS BY MEANS OF HETEROVALENT INTERFACE LAYERS [J].
CANTILE, M ;
SORBA, L ;
FARACI, P ;
YILDIRIM, S ;
BIASIOL, G ;
BRATINA, G ;
FRANCIOSI, A ;
MILLER, TJ ;
NATHAN, MI ;
TAPFER, L .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04) :2653-2659
[4]  
CORZINE S, 1993, SPIE 93, V1850, P177
[5]   DIRECT INVESTIGATION OF SUBSURFACE INTERFACE ELECTRONIC-STRUCTURE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY [J].
KAISER, WJ ;
BELL, LD .
PHYSICAL REVIEW LETTERS, 1988, 60 (14) :1406-1409
[6]   Low threshold MBE-grown AllnGaAs/AlGaAs strained multiquantum-well lasers by rapid thermal annealing [J].
Ko, J ;
Chen, CH ;
Coldren, LA .
ELECTRONICS LETTERS, 1996, 32 (22) :2099-2100
[7]  
KO J, 1997, C LAS EL OPT CLEO IE, V11, P289
[8]  
KO J, 1998, THESIS U CALIFORNIA
[9]   Ballistic-electron-emission spectroscopy of AlxGa1-xAs/GaAs heterostructures: Conduction-band offsets, transport mechanisms, and band-structure effects [J].
OShea, JJ ;
Brazel, EG ;
Rubin, ME ;
Bhargava, S ;
Chin, MA ;
Narayanamurti, V .
PHYSICAL REVIEW B, 1997, 56 (04) :2026-2035
[10]   FLUCTUATIONS OF THE AU-SI(100) SCHOTTKY-BARRIER HEIGHT [J].
PALM, H ;
ARBES, M ;
SCHULZ, M .
PHYSICAL REVIEW LETTERS, 1993, 71 (14) :2224-2227