学术探索
学术期刊
新闻热点
数据分析
智能评审

Low threshold MBE-grown AllnGaAs/AlGaAs strained multiquantum-well lasers by rapid thermal annealing

被引：8
作者：
Ko, J
Chen, CH
Coldren, LA
机构：
[1] Elec. and Comp. Eng. Department, University of California, Santa Barbara
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 22期
关键词：
rapid thermal processing; molecular beam epitaxial growth; semiconductor quantum wells;
D O I：
10.1049/el:19961378
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
With post-growth rapid thermal annealing (RTA), 824 nm strained Al0.15In0.25Ga0.6As multiquantum-well (MQW) lasers grown by solid source molecular beam epitaxy (MBE) showed a record low threshold current density of 83 A/cm(2) per well. Ridge waveguide lasers fabricated from the same material exhibited pulsed threshold current of 5 mA and 62% external quantum efficiency without facet coating. In addition, 1.4 K photoluminescence (PL) study suggests that RTA is very effective in removing nonradiative centres in the active region.
引用
收藏
页码：2099 / 2100
页数：2
相关论文
共 8 条
[1]   RESIDUAL OXYGEN LEVELS IN ALGAAS/GAAS QUANTUM-WELL LASER STRUCTURES - EFFECTS OF SI AND BE DOPING AND SUBSTRATE MISORIENTATION [J].
CHAND, N ;
JORDAN, AS ;
CHU, SNG ;
GEVA, M .
APPLIED PHYSICS LETTERS, 1991, 59 (25) :3270-3272
[2]  
CORZINE S, 1993, SPIE 93, V1850, P177
[3]  
KO J, 1996, ELECTRON LETT, V52, P351
[4]   INFLUENCE OF RAPID THERMAL ANNEALING ON THE PROPERTIES OF STRAINED GAINAS QUANTUM-WELL LASERS [J].
MAUREL, P ;
NAGLE, J ;
HIRTZ, JP .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (3A) :1056-1059
[5]   DARK-LINE-RESISTANT DIODE-LASER AT 0.8 -MU-M COMPRISING INALGAAS STRAINED QUANTUM-WELL [J].
WATERS, RG ;
DALBY, RJ ;
BAUMANN, JA ;
DESANCTIS, JL ;
SHEPARD, AH .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (05) :409-411
[6]   IMPROVEMENT OF GAAS/ALGAAS QUANTUM-WELL LASER-DIODES BY RAPID THERMAL ANNEALING [J].
XIE, K ;
WIE, CR ;
VARRIANO, JA ;
WICKS, GW .
JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (01) :1-6
[7]   THRESHOLD REDUCTION IN STRAINED INGAAS SINGLE QUANTUM-WELL LASERS BY RAPID THERMAL ANNEALING [J].
YAMADA, N ;
ROOS, G ;
HARRIS, JS .
APPLIED PHYSICS LETTERS, 1991, 59 (09) :1040-1042
[8]   EFFECTS OF RAPID THERMAL ANNEALING ON LASING PROPERTIES OF INGAAS/GAAS/GAINP QUANTUM-WELL LASERS [J].
ZHANG, G ;
NAPPI, J ;
OVTCHINNIKOV, A ;
ASONEN, H ;
PESSA, M .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (08) :3788-3791
1