IMPROVEMENT OF GAAS/ALGAAS QUANTUM-WELL LASER-DIODES BY RAPID THERMAL ANNEALING

被引：11

作者：

XIE, K

WIE, CR

VARRIANO, JA

WICKS, GW

机构：

[1] SUNY BUFFALO,CTR ELECTR & ELECTROOPT MAT,BUFFALO,NY 14260

[2] UNIV ROCHESTER,INST OPT,ROCHESTER,NY 14627

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1994年 / 23卷 / 01期

关键词：

GAAS-ALGAAS; LASER; MOLECULAR BEAM EPITAXY (MBE); QUANTUM WELL (QW); RAPID THERMAL ANNEALING (RTA);

D O I：

10.1007/BF02651259

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Post-growth annealing is shown to improve the laser diode quality of GaAs/AlGaAs graded-index separate confinement heterostructure quantum well laser diode structures grown at a nonoptimal substrate temperature lower than 680 degrees C by molecular beam epitaxy. Reduction by a factor of up to three in the threshold current was accompanied by a reduction in the interface trap density. The reduced threshold current is still higher than that of laser diodes grown at the optimal temperatures which are between 680 and 695 degrees C. The improvement in laser diode performance is ascribed to the reduction of interface nonradiative recombination centers.

引用

收藏

页码：1 / 6

页数：6

相关论文

共 18 条

[1] RESIDUAL OXYGEN LEVELS IN ALGAAS/GAAS QUANTUM-WELL LASER STRUCTURES - EFFECTS OF SI AND BE DOPING AND SUBSTRATE MISORIENTATION [J].

CHAND, N ;

JORDAN, AS ;

CHU, SNG ;

GEVA, M .

APPLIED PHYSICS LETTERS, 1991, 59 (25) :3270-3272

[2] MIGRATION AND GETTERING OF SI, BERYLLIUM, AND AMBIENT-RELATED O IN ALGAAS/GAAS LASER STRUCTURES [J].

CHAND, N ;

CHU, SNG ;

JORDAN, AS ;

GEVA, M ;

SWAMINATHAN, V .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02) :807-811

[3] VACANCY INTERACTIONS IN GAAS [J].

DANNEFAER, S ;

KERR, D .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :591-594

[4] ROLE OF SUBSTRATE-TEMPERATURE IN MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-POWER GAAS/ALGAAS LASERS [J].

IYER, SV ;

MEIER, HP ;

OVADIA, S ;

PARKS, C ;

ARENT, DJ ;

WALTER, W .

APPLIED PHYSICS LETTERS, 1992, 60 (04) :416-418

[5] RECOMBINATION-ENHANCED ANNEALING OF E1 AND E2 DEFECT LEVELS IN 1-MEV-ELECTRON-IRRADIATED N-GAAS [J].

LANG, DV ;

KIMERLING, LC ;

LEUNG, SY .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) :3587-3591

[6] LOW-TEMPERATURE GROWTH OF GAAS AND ALGAAS BY MBE AND EFFECTS OF POSTGROWTH THERMAL ANNEALING [J].

MILLER, JN ;

LOW, TS .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :30-38

[7] EXTRINSIC LAYER AT ALXGA1-XAS-GAAS INTERFACES [J].

MILLER, RC ;

TSANG, WT ;

MUNTEANU, O .

APPLIED PHYSICS LETTERS, 1982, 41 (04) :374-376

[8] FORMATION OF THERMALLY STABLE HIGH-RESISTIVITY ALGAAS BY OXYGEN IMPLANTATION [J].

PEARTON, SJ ;

IANNUZZI, MP ;

REYNOLDS, CL ;

PETICOLAS, L .

APPLIED PHYSICS LETTERS, 1988, 52 (05) :395-397

[9] IMPURITY TRAPPING, INTERFACE STRUCTURE, AND LUMINESCENCE OF GAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

PETROFF, PM ;

MILLER, RC ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1984, 44 (02) :217-219

[10] RADIATIVE AND NON-RADIATIVE RECOMBINATION IN GAAS/ALXGA1-XAS QUANTUM WELLS [J].

SERMAGE, B ;

ALEXANDRE, F ;

BEERENS, J ;

TRONC, P .

SUPERLATTICES AND MICROSTRUCTURES, 1989, 6 (04) :373-376