ROLE OF SUBSTRATE-TEMPERATURE IN MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-POWER GAAS/ALGAAS LASERS

被引：19

作者：

IYER, SV ^{[1
]}

MEIER, HP ^{[1
]}

OVADIA, S ^{[1
]}

PARKS, C ^{[1
]}

ARENT, DJ ^{[1
]}

WALTER, W ^{[1
]}

机构：

[1] IBM CORP,DIV RES,CH-8803 RUSCHLIKON,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 04期

关键词：

D O I：

10.1063/1.106620

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of high-quality GaAs/AlGaAs graded-index separate-confinement heterostructure single-quantum-well diode lasers is shown to be critically dependent on growth temperature. The temperature-dependent nature of oxygen incorporation in the cladding and active regions and its effect on laser performance is investigated in detail. A model is presented that takes the incorporation, desorption, and accumulation of impurities in different regimes into account.

引用

页码：416 / 418

页数：3

共 10 条

[1] SECONDARY ION MASS-SPECTROMETRY STUDY OF OXYGEN ACCUMULATION AT GAAS ALGAAS INTERFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].