EFFECT OF GROUP V/III FLUX RATIO ON THE RELIABILITY OF GAAS/AL0.3GA0.7AS LASER-DIODES PREPARED BY MOLECULAR-BEAM EPITAXY

被引：8

作者：

HAYAKAWA, T

TAKAHASHI, K

SUYAMA, T

KONDO, M

YAMAMOTO, S

HIJIKATA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 04期

关键词：

D O I：

10.1063/1.99484

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：252 / 254

页数：3

共 11 条

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[5] EFFECT OF GROUP-V/III FLUX RATIO ON LIGHTLY SI-DOPED ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[6] EFFECT OF GROWTH TEMPERATURE ON THE PHOTO-LUMINESCENT SPECTRA FROM SN-DOPED GA1-XALXAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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TSANG, WT .

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[8] EFFECT OF SUBSTRATE-TEMPERATURE ON THE CURRENT THRESHOLD OF GAAS-ALXGA1-X AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[9] THE CHARACTERIZATION AND FUNCTIONAL RELIABILITY OF 45 MBIT/S OPTICAL TRANSMITTERS CONTAINING MBE-GROWN LASERS [J].

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[10] THE RELIABILITY OF (ALGA)AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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