INFLUENCE OF RAPID THERMAL ANNEALING ON THE PROPERTIES OF STRAINED GAINAS QUANTUM-WELL LASERS

被引：10

作者：

MAUREL, P

NAGLE, J

HIRTZ, JP

机构：

[1] Laboratoire Central de Recherches, THOMSON-CSF, Orsay Cedex

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 3A期

关键词：

QUANTUM WELLS; LASERS; NONRADIATIVE TRAPS; RAPID THERMAL ANNEALING; PHOTOLUMINESCENCE; MBE;

D O I：

10.1143/JJAP.32.1056

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of rapid thermal annealing on the properties of GaInAs strained quantum well lasers is studied. Photoluminescence performed at 300 and 77 K shows that an optimum is found for annealing at 800-degrees-C-10 s. The threshold current density of the laser decreases by a factor of 2 to 3 while its internal quantum efficiency increases from 30% up to 60%. The origin of the non radiative traps involved in the process is discussed.

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收藏

页码：1056 / 1059

页数：4

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