RAPID THERMAL ANNEALING AND REGROWTH OF THERMAL DONORS IN SILICON

[1] THE OXYGEN RELATED DONOR EFFECT IN SILICON [J]. PHYSICA B & C, 1983, 116 (1-3): : 271 - 275

[2] CRAVEN RA, 1981, ELECTROCHEMICAL SOC, V81, P254

[3] OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (02): : 79 - 92

[4] HAHN SK, 1984, ELECTROCHEMICAL SOC, V84, P85

[5] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[6] KAISER W, 1957, J APPL PHYS, V28, P822

[7] KIMERLING LC, 1985, 13TH P INT C DEF SEM, P129

[8] KINETICS OF LASER-INDUCED SOLID-PHASE EPITAXY IN AMORPHOUS-SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 921 - 926

[9] DIFFUSIVITY OF OXYGEN IN SILICON DURING STEAM OXIDATION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 336 - 337

[10] Oehrlein G. S., 1985, Thirteenth International Conference on Defects in Semiconductors, P701

[1] THE OXYGEN RELATED DONOR EFFECT IN SILICON [J]. PHYSICA B & C, 1983, 116 (1-3): : 271 - 275

[2] CRAVEN RA, 1981, ELECTROCHEMICAL SOC, V81, P254

[3] OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (02): : 79 - 92

[4] HAHN SK, 1984, ELECTROCHEMICAL SOC, V84, P85

[5] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[6] KAISER W, 1957, J APPL PHYS, V28, P822

[7] KIMERLING LC, 1985, 13TH P INT C DEF SEM, P129

[8] KINETICS OF LASER-INDUCED SOLID-PHASE EPITAXY IN AMORPHOUS-SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 921 - 926

[9] DIFFUSIVITY OF OXYGEN IN SILICON DURING STEAM OXIDATION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 336 - 337

[10] Oehrlein G. S., 1985, Thirteenth International Conference on Defects in Semiconductors, P701