DIFFUSIVITY OF OXYGEN IN SILICON DURING STEAM OXIDATION

被引:150
作者
MIKKELSEN, JC
机构
关键词
D O I
10.1063/1.93089
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:336 / 337
页数:2
相关论文
共 7 条
  • [1] OXYGEN DIFFUSION IN SILICON AND THE INFLUENCE OF DIFFERENT DOPANTS
    GASS, J
    MULLER, HH
    STUSSI, H
    SCHWEITZER, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 2030 - 2037
  • [2] LOW-TEMPERATURE REDISTRIBUTION AND GETTERING OF OXYGEN IN SILICON
    MAGEE, TJ
    LEUNG, C
    KAWAYOSHI, H
    FURMAN, B
    HOPKINS, CG
    EVANS, CA
    [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5392 - 5394
  • [3] RECOIL OXYGEN IMPLANTS AND THERMAL REDISTRIBUTION OF OXYGEN IN THROUGH-OXIDE ARSENIC-IMPLANTED SI
    MAGEE, TJ
    LEUNG, C
    KAWAYOSHI, H
    PALKUTI, LJ
    FURMAN, BK
    EVANS, CA
    CHRISTEL, LA
    GIBBONS, JF
    DAY, DS
    [J]. APPLIED PHYSICS LETTERS, 1981, 39 (07) : 564 - 566
  • [4] MIKKELSEN JC, 1981, APPL PHYS LETT, V37, P712
  • [5] PATEL JR, 1981, SEMICONDUCTOR SILICO, P189
  • [6] Pauling L., 1960, NATURE CHEM BOND
  • [7] TAKANO Y, 1973, SEMICONDUCTOR SILICO, P469