Formation of large-grained uniform poly-Si films on glass at low temperature

被引：30

作者：

Aberle, AG ^{[1
]}

Harder, NP

Oelting, S

机构：

[1] Univ New S Wales, Photovolta Special Res Ctr, Sydney, NSW 2052, Australia

[2] ANTEC GmbH, D-65779 Kelkheim, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 226卷 / 2-3期

基金：

澳大利亚研究理事会;

关键词：

crystal structure; physical vapor deposition processes; polycrystalline deposition; elemental solids; semiconducting silicon; solar cells;

D O I：

10.1016/S0022-0248(01)01379-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The formation of device-grade polycrystalline silicon (poly-Si) films on low-cost substrates at low temperature using simple and fast processes is of enormous interest for photovoltaics and lar ge-area electronics. In this paper we report the realisation of thick (similar to 5 mum), large-grained (similar to 5 mum), uniform poly-Si films on glass at a substrate temperature below 650 degreesC. This important technological progress was achieved by using ion-assisted deposition of silicon for thickening a thin poly-Si seeding layer grown on glass by aluminium-induced crystallisation of amorphous silicon. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：209 / 214

页数：6

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