Density multiplication and improved lithography by directed block copolymer assembly

被引:1099
作者
Ruiz, Ricardo [1 ]
Kang, Huiman [2 ]
Detcheverry, Francois A. [2 ]
Dobisz, Elizabeth [1 ]
Kercher, Dan S. [1 ]
Albrecht, Thomas R. [1 ]
de Pablo, Juan J. [2 ]
Nealey, Paul F. [2 ]
机构
[1] Hitachi Global Storage Technol, San Jose Res Ctr, San Jose, CA 95135 USA
[2] Univ Wisconsin, Dept Biol & Chem Engn, Madison, WI 53706 USA
关键词
D O I
10.1126/science.1157626
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Self-assembling materials spontaneously form structures at length scales of interest in nanotechnology. In the particular case of block copolymers, the thermodynamic driving forces for self- assembly are small, and low- energy defects can get easily trapped. We directed the assembly of defect- free arrays of isolated block copolymer domains at densities up to 1 terabit per square inch on chemically patterned surfaces. In comparing the assembled structures to the chemical pattern, the density is increased by a factor of four, the size is reduced by a factor of two, and the dimensional uniformity is vastly improved.
引用
收藏
页码:936 / 939
页数:4
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