Modeling of kinetic and static friction between an elastically bent nanowire and a flat surface

被引：23

作者：

Dorogin, Leonid M. ^{[1
]}

Polyakov, Boris ^{[1
,2
]}

Petruhins, Andrejs ^{[2
]}

Vlassov, Sergei ^{[1
]}

Lohmus, Ruenno ^{[1
]}

Kink, Ilmar ^{[1
]}

Romanov, Alexey E. ^{[1
,3
]}

机构：

[1] Univ Tartu, Inst Phys, EE-51014 Tartu, Estonia

[2] Univ Latvia, Inst Solid State Phys, LV-1063 Riga, Latvia

[3] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

JOURNAL OF MATERIALS RESEARCH | 2012年 / 27卷 / 03期

关键词：

SEMICONDUCTOR NANOWIRES; INAS NANOWIRES;

D O I：

10.1557/jmr.2011.339

中图分类号：

T [工业技术];

学科分类号：

120111 [工业工程];

摘要：

Friction forces for a nanowire (NW) elastically bent on flat substrate were investigated both theoretically and experimentally. Models based on elastic beam theory were proposed considering balance of external, frictional, and elastic forces along the NW. The distributed friction force was determined for two cases: (i) the NW was uniformly dragged at its midpoint and bent by kinetic friction forces and (ii) the NW was held in a bent state by static friction forces. The first case considers a uniform distribution of kinetic friction along the NW and enables the measurement of the friction force from the elastically deformed NW profile. The second case exploits the interplay between static friction and elastic forces inside the NW to find the distributed friction force. An original method for the measurement of frictional forces in both cases while maintaining total force and momentum equilibrium was introduced and demonstrated for ZnO NWs on a Si wafer. Averaged kinetic and static friction forces were compared for the same individual NW.

引用

页码：580 / 585

页数：6

共 22 条

[1]

Shear stress measurements on InAs nanowires by AFM manipulation [J].