Bias-controlled friction of InAs nanowires on a silicon nitride layer studied by atomic force microscopy

被引：18

作者：

Conache, G. ^{[1
,2
]}

Ribayrol, A. ^{[1
]}

Froberg, L. E. ^{[1
]}

Borgstrom, M. T. ^{[1
]}

Samuelson, L. ^{[1
]}

Montelius, L. ^{[1
]}

Pettersson, H. ^{[1
,2
]}

Gray, S. M. ^{[1
]}

机构：

[1] Lund Univ, Solid State Phys & Nanometer Struct Consortium, SE-22100 Lund, Sweden

[2] Halmstad Univ, Ctr Appl Math & Phys, SE-30118 Halmstad, Sweden

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 03期

基金：

瑞典研究理事会;

关键词：

AFM MANIPULATION; SURFACES;

D O I：

10.1103/PhysRevB.82.035403

中图分类号：

T [工业技术];

学科分类号：

120111 [工业工程];

摘要：

By studying how nanowires lying on a surface bend when pushed by an atomic force microscopy tip we are able to measure the friction between them and the substrate. Here, we show how the friction between InAs nanowires and an insulating silicon nitride layer varies when a dc voltage is applied to the tip during manipulation. The bias charges the capacitor formed by the wire and the grounded silicon back contact. Electrostatic forces increase the contact pressure and allow us to tune the friction between the wire and the silicon nitride surface. Using nanowires of about 40-70 nm diameter and a few microns in length we have applied biases in the range +12 to -12 V. A monotonic increase of the sliding friction with voltage was observed. This increase in friction with the normal force implies that the mesoscopic nanowire-surface system behaves like a macroscopic contact, despite the nanometer size of the contact in the direction of motion. The demonstrated bias-controlled friction has potential applications in MEMS/NEMS devices.

引用

页数：5

共 22 条

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[2]

One-dimensional heterostructures in semiconductor nanowhiskers [J].