Influence of current density in anodizing of an Al-W alloy

被引:28
作者
Iglesias-Rubianes, L
Skeldon, P
Thompson, GE
Shimizu, K
Habazaki, H
机构
[1] Univ Manchester, Inst Sci & Technol, Corros & Protect Ctr, Manchester M60 1QD, Lancs, England
[2] Keio Univ, Chem Lab, Yokohama, Kanagawa 223, Japan
[3] Tohoku Univ, Mat Res Inst, Aoba Ku, Sendai, Miyagi 98077, Japan
关键词
aluminium; alloy; anodizing; current density;
D O I
10.1016/S0010-938X(01)00022-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The influences of current density in development of amorphous, barrier anodic films on a metastable, solid solution, Al-6.5at.%W alloy is examined, with focus on enrichments in the alloy, oxidation processes at the alloy/film interface and migration of species in the film. The films were formed at current densities between 0.01-100 mA cm(-2) in sodium tungstate electrolyte and examined by transmission electron microscopy and Rutherford backscattering spectroscopy. Enrichments of tungsten in the alloy develop at each of the selected current densities, with enrichments in the range 2-4 x 10(15) W atoms cm(-2). incorporation of tungsten species into the films at the alloy/film interface proceeds non-uniformly, with cycles of local enrichment of the alloy, oxidation of the enriched tungsten and subsequent depletion of the alloy. The tungsten species migrate more slowly than Al3+ ions, leading to layering of the film composition. The cyclic incorporation of tungsten species into the film and the migration of tungsten species within the film are similar for the selected current densities, at the resolution of the experiments. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:2217 / 2227
页数:11
相关论文
共 16 条
[11]   Anodizing of multilayer alloy films formed by sputter-deposition of valve metals [J].
Habazaki, H ;
Skeldon, P ;
Thompson, GE ;
Wood, GC ;
Shimizu, K .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1996, 73 (02) :297-308
[12]   Gel formation and the efficiency of anodic film growth on aluminium [J].
Morlidge, JR ;
Skeldon, P ;
Thompson, GE ;
Habazaki, H ;
Shimizu, K ;
Wood, GC .
ELECTROCHIMICA ACTA, 1999, 44 (14) :2423-2435
[13]   THE ANODIC-OXIDATION OF SUPERIMPOSED METALLIC LAYERS - THEORY [J].
PRINGLE, JPS .
ELECTROCHIMICA ACTA, 1980, 25 (11) :1423-1437
[14]   EXAMINATION OF ALUMINUM-COPPER FILMS DURING GALVANOSTATIC FORMATION OF ANODIC OXIDE .2. RUTHERFORD BACKSCATTERING AND DEPTH PROFILING [J].
STREHBLOW, HH ;
MELLIARSMITH, CM ;
AUGUSTYNIAK, WM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (06) :915-919
[15]   THE COMPOSITIONS OF BARRIER-TYPE ANODIC FILMS FORMED ON ALUMINUM IN MOLYBDATE AND TUNGSTATE ELECTROLYTES [J].
THOMPSON, GE ;
SKELDON, P ;
SHIMIZU, K ;
WOOD, GC .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1995, 350 (1692) :143-168
[16]   Stability of the passive state of Al-W sputter deposited amorphous alloys [J].
Wolowik, A ;
JanikCzachor, M ;
Werner, Z .
MATERIALS CHEMISTRY AND PHYSICS, 1997, 49 (02) :164-168