Silicon thin films obtained by rapid thermal atmospheric pressure chemical vapour deposition

被引:8
作者
Monna, R
Slaoui, A
Lachiq, A
Muller, JC
机构
[1] Laboratoire PHASE, F-67037 Strasbourg
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 39卷 / 01期
关键词
silicon thin films; doping; chemical vapour deposition; microscopy;
D O I
10.1016/0921-5107(95)01533-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Epitaxial growth of silicon films over the temperature range from 900 to 1300 degrees C was investigated in a rapid thermal chemical vapour deposition reactor working at atmospheric pressure. The growth of boron doped Si was performed from trichlorosilane and trichloroborine diluted in hydrogen. The epilayers were analysed by Rutherford backscattering spectroscopy, specular reflectance. scanning electron microscopy and Nomarski microscopy. Mechanisms for the observed growth rate are examined, and art: tied closely to the degree of surface cover?ge by Cl. The electrical properties of the deposited films were also checked using the spreading resistance and the four point probe techniques.
引用
收藏
页码:48 / 51
页数:4
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