SILICON EPITAXIAL-GROWTH BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITION

被引：25

作者：

LEE, SK

KU, YH

KWONG, DL

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 18期

关键词：

D O I：

10.1063/1.101288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1775 / 1777

页数：3

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