Ultralow Absorption Coefficient and Temperature Dependence of Radiative Recombination of CH3NH3Pbl3 Perovskite from Photoluminescence

被引：70

作者：

Barugkin, Chog ^{[1
]}

Cong, Jinjin ^{[1
]}

The Duong ^{[1
]}

Rahman, Shakir ^{[1
]}

Nguyen, Hieu T. ^{[1
]}

Macdonald, Daniel ^{[1
]}

White, Thomas P. ^{[1
]}

Catchpole, Kylie R. ^{[1
]}

机构：

[1] Australian Natl Univ, Res Sch Engn, Canberra, ACT 2601, Australia

来源：

JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2015年 / 6卷 / 05期

基金：

澳大利亚研究理事会;

关键词：

GENERALIZED PLANCK LAW; TANDEM SOLAR-CELLS; HALIDE PEROVSKITES; INTRINSIC SILICON; LUMINESCENCE; VERIFICATION; EMERGENCE; SPECTRA;

D O I：

10.1021/acs.jpclett.5b00044

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Spectrally resolved photoluminescence is used to measure the band-to-band absorption coefficient alpha(BB)((h) over bar omega) of organic-inorganic hybrid perovskite methylammonium lead iodide (CH3NH3PbI3) films from 675 to 1400 nm. Unlike other methods used to extract the absorption coefficient, photoluminescence is only affected by band-to-band absorption and is capable of detecting absorption events at very low energy levels. Absorption coefficients as low as 10(-1)4 cm(-1) are detected at room temperature for long wavelengths, which is 14 orders of magnitude lower than reported values at shorter wavelengths. The temperature dependence of alpha(BB)((h) over bar omega) is calculated from the photoluminescence spectra of CH3NH3PbI3 in the temperature range 80-360 K. Based on the temperature-dependent alpha(BB)((h) over bar omega), the product of the radiative recombination coefficient and square of the intrinsic carrier density, B(T) x n(i)(2), is also obtained.

引用

页码：767 / 772

页数：6

共 31 条

[1] Injection dependence of spontaneous radiative recombination in crystalline silicon: Experimental verification and theoretical analysis [J].

Altermatt, P. P. ;

Geelhaar, F. ;

Trupke, T. ;

Dai, X. ;

Neisser, A. ;

Daub, E. .

APPLIED PHYSICS LETTERS, 2006, 88 (26)

[2] Evaluating Plasmonic Light Trapping With Photoluminescence [J].

Barugkin, Chog ;

Wan, Yimao ;

Macdonald, Daniel ;

Catchpole, Kylie R. .

IEEE JOURNAL OF PHOTOVOLTAICS, 2013, 3 (04) :1292-1297

[3] ULTRALOW VALUES OF THE ABSORPTION-COEFFICIENT OF SI OBTAINED FROM LUMINESCENCE [J].

DAUB, E ;

WURFEL, P .

PHYSICAL REVIEW LETTERS, 1995, 74 (06) :1020-1023

[4] Organometallic Halide Perovskites: Sharp Optical Absorption Edge and Its Relation to Photovoltaic Performance [J].

De Wolf, Stefaan ;

Holovsky, Jakub ;

Moon, Soo-Jin ;

Loeper, Philipp ;

Niesen, Bjoern ;

Ledinsky, Martin ;

Haug, Franz-Josef ;

Yum, Jun-Ho ;

Ballif, Christophe .

JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2014, 5 (06) :1035-1039

[5] VERIFICATION OF A GENERALIZED PLANCK LAW BY INVESTIGATION OF THE EMISSION FROM GAAS LUMINESCENT DIODES [J].

FEUERBACHER, B ;

WURFEL, P .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (16) :3803-3810

[6] OPTICAL-PROPERTIES OF INTRINSIC SILICON AT 300 K [J].

GREEN, MA ;

KEEVERS, MJ .

PROGRESS IN PHOTOVOLTAICS, 1995, 3 (03) :189-192

[7] Self-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients [J].

Green, Martin A. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2008, 92 (11) :1305-1310

[8]

Green MA, 2014, NAT PHOTONICS, V8, P506, DOI [10.1038/nphoton.2014.134, 10.1038/NPHOTON.2014.134]

[9] Simultaneous stress and defect luminescence study on silicon [J].

Gundel, Paul ;

Schubert, Martin C. ;

Warta, Wilhelm .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (02) :436-441

[10] Organometal Halide Perovskites as Visible-Light Sensitizers for Photovoltaic Cells [J].

Kojima, Akihiro ;

Teshima, Kenjiro ;

Shirai, Yasuo ;

Miyasaka, Tsutomu .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2009, 131 (17) :6050-+

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