Simultaneous stress and defect luminescence study on silicon

被引：29

作者：

Gundel, Paul ^{[1
]}

Schubert, Martin C. ^{[1
]}

Warta, Wilhelm ^{[1
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst ISE, D-79110 Freiburg, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2010年 / 207卷 / 02期

关键词：

PHOTOLUMINESCENCE SPECTROSCOPY; PHOTO-LUMINESCENCE; MECHANICAL-STRESS; UNIAXIAL-STRESS; GERMANIUM; PRESSURE; WAFERS;

D O I：

10.1002/pssa.200925368

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Internal stress is strongly correlated with the mechanical stability of silicon wafers and with the distribution of defects and thus the minority carrier lifetime, which is often the limiting parameter for multicrystalline (me) silicon solar cells. Therefore, internal stress is a highly relevant parameter for me silicon. In this paper, a qualitative internal stress measurement technique by photoluminescence spectroscopy for me silicon is presented. This technique is based on the stress-induced-bandgap energy shift. Stress measurements are compared to defect luminescence images, which are gathered in the same measurement. The method is evaluated by stress measurements with micro-Raman spectroscopy. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：436 / 441

页数：6

共 19 条

[1] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J].

BALSLEV, I .

PHYSICAL REVIEW, 1966, 143 (02) :636-&

[2] Grain orientation, texture, and internal stress optically evaluated by micro-Raman spectroscopy [J].

Becker, M. ;

Scheel, H. ;

Christiansen, S. ;

Strunk, H. P. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (06)

[3]

DeWolf I, 1996, SEMICOND SCI TECH, V11, P139, DOI 10.1088/0268-1242/11/2/001

[4]

Goroff I., 1961, PHYS REV, V132, P1080

[5] Micro-photoluminescence spectroscopy on metal precipitates in silicon [J].

Gundel, Paul ;

Schubert, Martin C. ;

Kwapil, Wolfram ;

Schoen, Jonas ;

Reiche, Manfred ;

Savin, Hele ;

Yli-Koski, Marko ;

Sans, Juan Angel ;

Martinez-Criado, Gema ;

Seifert, Winfried ;

Warta, Wilhelm ;

Weber, Eicke R. .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, 3 (7-8) :230-232

[6] Excitation and pressure effects on photoluminescence from dislocation engineered silicon material [J].

Ishibashi, Y. ;

Kobayashi, T. ;

Prins, A. D. ;

Nakahara, J. ;

Lourenco, M. A. ;

Gwilliam, R. M. ;

Homewood, K. P. .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (01) :402-406

[7] Iron contamination in silicon technology [J].

Istratov, AA ;

Hieslmair, H ;

Weber, ER .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 70 (05) :489-534

[8] Room-temperature silicon light-emitting diodes based on dislocation luminescence [J].

Kveder, V ;

Badylevich, M ;

Steinman, E ;

Izotov, A ;

Seibt, M ;

Schröter, W .

APPLIED PHYSICS LETTERS, 2004, 84 (12) :2106-2108

[9] EFFECTS OF UNIAXIAL STRESS ON INDIRECT EXCITON SPECTRUM OF SILICON [J].

LAUDE, LD ;

POLLAK, FH ;

CARDONA, M .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08) :2623-&

[10] Defect monitoring using scanning photoluminescence spectroscopy in multicrystalline silicon wafers [J].

Ostapenko, S ;

Tarasov, I ;

Kalejs, JP ;

Haessler, C ;

Reisner, EU .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (08) :840-848

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