Step-controlled strain relaxation in the vicinal surface epitaxy of nitrides

被引：51

作者：

Huang, XR ^{[1
]}

Bai, J

Dudley, M

Wagner, B

Davis, RF

Zhu, Y

机构：

[1] SUNY Stony Brook, Dept Mat Sci & Engn, Stony Brook, NY 11794 USA

[2] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[3] Brookhaven Natl Lab, Dept Mat Sci, Upton, NY 11973 USA

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 95卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.95.086101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

On-axis and vicinal GaN/AlN/6H-SiC structures grown under identical conditions have been studied by x-ray diffraction and transmission electron microscopy to demonstrate the distinctive features of vicinal surface epitaxy (VSE) of nitrides on SiC. In VSE, the epilayers are tilted from the substrate due to the out-of-plane lattice mismatch (Nagai tilts), and the in-plane mismatch strains are more relaxed. The majority of misfit dislocations (MDs) at the vicinal AlN/6H-SiC interface are found to be unpaired partial MDs that are geometrically necessary to correct the stacking sequences from 6H to 2H. This mechanism indicates that it is possible to develop "step-controlled-epitaxy" strategies to control strain relaxation by adjusting the substrate offcut angles.

引用

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