Solid single-source metal organic chemical vapor deposition of yttria-stabilized zirconia

被引：28

作者：

Dubourdieu, C ^{[1
]}

Kang, SB ^{[1
]}

Li, YQ ^{[1
]}

Kulesha, G ^{[1
]}

Gallois, B ^{[1
]}

机构：

[1] Stevens Inst Technol, Dept Mat Sci & Engn, Hoboken, NJ 07030 USA

来源：

THIN SOLID FILMS | 1999年 / 339卷 / 1-2期

关键词：

chemical vapour deposition; oxides; structural properties; zirconium;

D O I：

10.1016/S0040-6090(98)01330-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Yttria-stabilized zirconia (YSZ) thin films with yttria content between 5 and 30 mol% were deposited onto r-plane (10 (1) over bar 2) Al2O3, c-plane (0001) Al2O3 and Si (001) substrates by solid single-source metal organic chemical Vapor deposition (MOCVD) from Y(thd)(3) and zr(thd)(4) precursors in the temperature range 450-850 degrees C at a pressure of 0.40 kPa. With this delivery technique,,growth rates as high as 0.7 mu m min(-1) and as low as 2 nm min(-1) could be achieved reproducibly and controllably by varying the source feeding rate. The composition could be controlled precisely by varying the proportions of each precursor in the precursor mixture above a substrate temperature of 600 degrees C. YSZ thin films exhibit highly aligned columnar or fine-grained microstructures below this value. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：165 / 173

页数：9

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