SINGLE SOURCE MOCVD OF EPITAXIAL OXIDE THIN-FILMS

A novel and inexpensive single source metalorganic chemical vapor deposition (MOCVD) reactor has been developed at Hewlett Packard Laboratories, which permits the controlled and reproducible growth of device quality thin film heterostructures on a variety of substrates, using marginally volatile beta-diketonate powdered solid sources. This reactor has been used to deposit state-of-the-art dielectrics, ferroelectrics and yttrium barium copper oxide (YBa2Cu3O7 or YBCO) high temperature superconducting multi layers. The technique is readily applicable to many other oxide and non-oxide material systems. We describe herein the reactor and present the results of deposition experiments for single layers and heterostructures of YBCO on substrates up to 4 inches in diameter. To demonstrate the versatility of the reactor, we also present initial results for the deposition of other materials, including MgO, CeO2, Pr6O11, barium cerate, hematite, and strontium barium niobate.