MOCVD IN INVERTED STAGNATION POINT FLOW .1. DEPOSITION OF GAAS FROM TMAS AND TMGA

被引：32

作者：

LEE, P ^{[1
]}

MCKENNA, D ^{[1
]}

KAPUR, D ^{[1
]}

JENSEN, KF ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT CHEM ENGN & MAT SCI,MINNEAPOLIS,MN 55455

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90291-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：120 / 127

页数：8

共 13 条

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[2] HETEROGENEOUS KINETICS AND MASS-TRANSPORT IN CHEMICAL VAPOR-DEPOSITION PROCESSES .2. APPLICATION TO SILICON EPITAXY
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[3] CVD IN STAGNATION POINT FLOW - AN EVALUATION OF THE CLASSICAL 1D-TREATMENT
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (05) : 961 - 970
[4] OMVPE GROWTH OF GAINAS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 64 (03) : 461 - 470
[5] NUMERICAL-ANALYSIS OF THE TRANSPORT PHENOMENA IN MOCVD PROCESS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (05): : 620 - 625
[6] LUDOWISE MJ, 1982, P SOC PHOTO-OPT INST, V323, P117, DOI 10.1117/12.934285
[7] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF III-V SEMICONDUCTORS
LUDOWISE, MJ
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) : R31 - R55
[8] COMPLEX FLOW PHENOMENA IN MOCVD REACTORS .1. HORIZONTAL REACTORS
MOFFAT, H
JENSEN, KF
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 108 - 119
[9] REDUCED PRESSURE MOVPE GROWTH AND CHARACTERIZATION OF GAAS/GAALAS HETEROSTRUCTURES USING A TRIETHYLGALLIUM SOURCE
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BLACK, J
ZEMON, S
LAMBERT, G
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 437 - 444
[10] POLLARD R, 1980, J ELECTROCHEM SOC, V127, P969

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