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NUMERICAL-ANALYSIS OF THE TRANSPORT PHENOMENA IN MOCVD PROCESS
被引:51
作者
:
KUSUMOTO, Y
论文数:
0
引用数:
0
h-index:
0
KUSUMOTO, Y
HAYASHI, T
论文数:
0
引用数:
0
h-index:
0
HAYASHI, T
KOMIYA, S
论文数:
0
引用数:
0
h-index:
0
KOMIYA, S
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
|
1985年
/ 24卷
/ 05期
关键词
:
D O I
:
10.1143/JJAP.24.620
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:620 / 625
页数:6
相关论文
共 12 条
[1]
A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR
EVERSTEYN, FC
论文数:
0
引用数:
0
h-index:
0
EVERSTEYN, FC
SEVERIN, PJW
论文数:
0
引用数:
0
h-index:
0
SEVERIN, PJW
BREKEL, CHJV
论文数:
0
引用数:
0
h-index:
0
BREKEL, CHJV
PEEK, HL
论文数:
0
引用数:
0
h-index:
0
PEEK, HL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(07)
: 925
-
+
[2]
QUANTITATIVE CALCULATION OF GROWTH-RATE OF EPITAXIAL SILICON FROM SICL4 IN A BARREL REACTOR
FUJII, E
论文数:
0
引用数:
0
h-index:
0
FUJII, E
KOGA, Y
论文数:
0
引用数:
0
h-index:
0
KOGA, Y
HARUNA, K
论文数:
0
引用数:
0
h-index:
0
HARUNA, K
NAKAMURA, H
论文数:
0
引用数:
0
h-index:
0
NAKAMURA, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(08)
: 1106
-
&
[3]
Gosman A. D., 1969, HEAT MASS TRANSFER R
[4]
HAYASHI T, 1985, UNPUB SHINKU
[5]
IKOMA T, 1982, SHIN KAGOBUTSU HANDO
[6]
JUZA J, 1982, J ELECTROCHEM SOC, V129, P1627, DOI 10.1149/1.2124222
[7]
ANALYSIS OF TRANSPORT PROCESSES IN VERTICAL CYLINDER EPITAXY REACTORS
MANKE, CW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
MANKE, CW
DONAGHEY, LF
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
DONAGHEY, LF
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(04)
: 561
-
569
[8]
DEPOSITION OF GAAS EPITAXIAL LAYERS BY ORGANOMETALLIC CVD - TEMPERATURE AND ORIENTATION DEPENDENCE
REEP, DH
论文数:
0
引用数:
0
h-index:
0
REEP, DH
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(03)
: 675
-
680
[9]
SILICON EPITAXIAL-GROWTH BY ROTATING DISK METHOD
SUGAWARA, K
论文数:
0
引用数:
0
h-index:
0
SUGAWARA, K
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(12)
: 1749
-
&
[10]
GAS-FLOW PATTERN AND MASS-TRANSFER ANALYSIS IN A HORIZONTAL FLOW REACTOR FOR CHEMICAL VAPOR-DEPOSITION
TAKAHASHI, R
论文数:
0
引用数:
0
h-index:
0
TAKAHASHI, R
SUGAWARA, K
论文数:
0
引用数:
0
h-index:
0
SUGAWARA, K
KOGA, Y
论文数:
0
引用数:
0
h-index:
0
KOGA, Y
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(10)
: 1406
-
+
←
1
2
→
共 12 条
[1]
A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR
EVERSTEYN, FC
论文数:
0
引用数:
0
h-index:
0
EVERSTEYN, FC
SEVERIN, PJW
论文数:
0
引用数:
0
h-index:
0
SEVERIN, PJW
BREKEL, CHJV
论文数:
0
引用数:
0
h-index:
0
BREKEL, CHJV
PEEK, HL
论文数:
0
引用数:
0
h-index:
0
PEEK, HL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(07)
: 925
-
+
[2]
QUANTITATIVE CALCULATION OF GROWTH-RATE OF EPITAXIAL SILICON FROM SICL4 IN A BARREL REACTOR
FUJII, E
论文数:
0
引用数:
0
h-index:
0
FUJII, E
KOGA, Y
论文数:
0
引用数:
0
h-index:
0
KOGA, Y
HARUNA, K
论文数:
0
引用数:
0
h-index:
0
HARUNA, K
NAKAMURA, H
论文数:
0
引用数:
0
h-index:
0
NAKAMURA, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(08)
: 1106
-
&
[3]
Gosman A. D., 1969, HEAT MASS TRANSFER R
[4]
HAYASHI T, 1985, UNPUB SHINKU
[5]
IKOMA T, 1982, SHIN KAGOBUTSU HANDO
[6]
JUZA J, 1982, J ELECTROCHEM SOC, V129, P1627, DOI 10.1149/1.2124222
[7]
ANALYSIS OF TRANSPORT PROCESSES IN VERTICAL CYLINDER EPITAXY REACTORS
MANKE, CW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
MANKE, CW
DONAGHEY, LF
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
DONAGHEY, LF
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(04)
: 561
-
569
[8]
DEPOSITION OF GAAS EPITAXIAL LAYERS BY ORGANOMETALLIC CVD - TEMPERATURE AND ORIENTATION DEPENDENCE
REEP, DH
论文数:
0
引用数:
0
h-index:
0
REEP, DH
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(03)
: 675
-
680
[9]
SILICON EPITAXIAL-GROWTH BY ROTATING DISK METHOD
SUGAWARA, K
论文数:
0
引用数:
0
h-index:
0
SUGAWARA, K
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(12)
: 1749
-
&
[10]
GAS-FLOW PATTERN AND MASS-TRANSFER ANALYSIS IN A HORIZONTAL FLOW REACTOR FOR CHEMICAL VAPOR-DEPOSITION
TAKAHASHI, R
论文数:
0
引用数:
0
h-index:
0
TAKAHASHI, R
SUGAWARA, K
论文数:
0
引用数:
0
h-index:
0
SUGAWARA, K
KOGA, Y
论文数:
0
引用数:
0
h-index:
0
KOGA, Y
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(10)
: 1406
-
+
←
1
2
→