Al0.35Ga0.65N pin diodes exhibiting sub-fA leakage currents

被引：2

作者：

Aslam, S

Yan, F

Franz, D

Ferguson, I

Asghar, A

Payne, A

机构：

[1] Raytheon ITSS, Lanham, MD 20706 USA

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

ELECTRONICS LETTERS | 2005年 / 41卷 / 14期

关键词：

D O I：

10.1049/el:20051268

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using conventional photolithography, Al0.35Ga0.65N pin diodes have been fabricated that exhibit extremely low reverse bias leakage currents. Macroscopic I-V measurements from a statistical population of 64, 120 mu m diameter, circular diodes gives a mean leakage current of 0.96 fA with a standard deviation of 0.90 fA at -0.5 V bias.

引用

页码：820 / 822

页数：3

共 4 条

[1]

Dmitriev VA, 1996, MRS INTERNET J N S R, V1, pU233

[2] Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors [J].