Voltage contrast in submicron integrated circuits by scanning force microscopy

被引:11
作者
Bohm, C
Sprengepiel, J
Otterbeck, M
Kubalek, E
机构
[1] Gerhard-Mercator-Univ.-GH-Duisburg, Fg. Werkstoffe der Elektrotechnik, 47048 Duisburg
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 02期
关键词
D O I
10.1116/1.588726
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A scanning force microscope can be used to measure a device's internal electrical potential with high spatial and temporal resolution. We present experimental results taken with a scanning force tester constructed in our lab that offers nanometer spatial resolution and gigahertz measurement bandwidth. The results are comparable to network analyzer results. (C) 1996 American Vacuum Society.
引用
收藏
页码:842 / 844
页数:3
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