VOLTAGE CONTRAST STUDIES ON 0-CENTER-DOT-5 MU-M INTEGRATED-CIRCUITS BY SCANNING FORCE MICROSCOPY

被引：2

作者：

BOHM, C

SPRENGEPIEL, J

KUBALEK, E

机构：

[1] Gerhard-Mercator-Universität-GH Duisburg, Fachgebiet Werkstoffe der Elektrotechnik, Duisburg, 47048

来源：

QUALITY AND RELIABILITY ENGINEERING INTERNATIONAL | 1995年 / 11卷 / 04期

关键词：

CONTACTLESS TESTING; MICROSCOPY; SCANNING FORCE MICROSCOPE; ATOMIC FORCE MICROSCOPE;

D O I：

10.1002/qre.4680110407

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A scanning force microscope (SFM) test system is used for voltage contrast studies on 0 . 5 mu m integrated circuits. Waveform measurements are performed on passivated 0 . 5 mu m conducting lines up to 4 GHz. Additionally two-dimensional measurements at 10 MHz demonstrate the potential for device internal function and failure analysis in the sub-mu m regime by direct correlation between voltage contrast and quantitative topography images.

引用

页码：253 / 256

页数：4

共 8 条

[1] VOLTAGE CONTRAST IN INTEGRATED-CIRCUITS WITH 100 NM SPATIAL-RESOLUTION BY SCANNING FORCE MICROSCOPY [J].