Single electron tunneling detected by electrostatic force

被引:33
作者
Klein, LJ [1 ]
Williams, CC [1 ]
机构
[1] Univ Utah, Dept Phys, Salt Lake City, UT 84112 USA
关键词
D O I
10.1063/1.1403256
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single electron tunneling events between a specially fabricated scanning probe and a conducting surface are demonstrated. The probe is an oxidized silicon atomic force microscope tip with an electrically isolated metallic dot at its apex. A voltage applied to the silicon tip produces an electrostatic force on the probe, which depends upon the charge on the metallic dot. Single electron tunneling events are observed in both the electrostatic force amplitude and phase signal. Electrostatic modeling of the probe response to single tunneling events is in good agreement with measured results. (C) 2001 American Institute of Physics.
引用
收藏
页码:1828 / 1830
页数:3
相关论文
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