MOCVD growth of ordered Cd(1-x)ZnxTe epilayers

被引：23

作者：

Cohen, K ^{[1
]}

Stolyarova, S

Amir, N

Chack, A

Beserman, R

Weil, R

Nemirovsky, Y

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, Kidron Microelect Res Ctr, IL-32000 Haifa, Israel

[2] Technion Israel Inst Technol, Dept Phys, Inst Solid State, IL-32000 Haifa, Israel

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 198卷

基金：

以色列科学基金会;

关键词：

Cd(1-x)ZnxTe; epitaxial growth; MOCVD; long-range ordering; CuPt B-type structure;

D O I：

10.1016/S0022-0248(98)01203-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This work reports for the first time the preparation of ordered Cd(1-x)ZnxTe epilayers. The epilayers were deposited on CdTe (100) substrates by metal organic chemical vapor deposition in a horizontal quartz reactor. Diethylzinc, dimethylcadmuim and diethyltelluride were used as metalorganic precursors with hydrogen as a carrier gas. Influence of different growth parameters on the growth process is studied for the deposited Cd(1-x)ZnxTe layers. Transmission electron microscopy diffraction was performed and the long-range ordering effect was observed for the first time, in these layers. The appearance of extra spots attributed to (h +/- 1/2, k +/- 1/2, l +/- 1/2) planes is the indication of CuPt-type atomic ordering in the CdZaTe epilayers. (C) 1999 Elsevier Science B.V. All rights reserved. PACS: 81.05.Dz; 81.15.Kk; 61.10.Eq; 61.14. -x.

引用

页码：1174 / 1178

页数：5

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