ORDERED PHASE IN (HG,CD)TE GROWN BY LIQUID-PHASE EPITAXY ON CDTE (111)B SUBSTRATE

被引：19

作者：

CHANG, KT

GOO, E

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 04期

关键词：

D O I：

10.1116/1.586247

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

(Hg,Cd) Te films grown by liquid-phase epitaxy on CdTe (111) B substrates are observed by transmission electron microscopy. An ordered phase is observed giving rise to 1/2(111) reflections. Diffraction patterns are consistent with the CrCuS2 Structure or L1(1) ordering. All four orientation variants of ordered phase coexist in the specimen. The selected-area diffraction pattern indicates the bond distances in basal plane decrease upon ordering.

引用

页码：1549 / 1552

页数：4

共 26 条

[1] SUBSTRATE-DRIVEN ORDERING MICROSTRUCTURE IN GAXIN1-XP ALLOYS
BELLON, P
CHEVALIER, JP
AUGARDE, E
ANDRE, JP
MARTIN, GP
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (06) : 2388 - 2394
[2] THE PREPARATION OF CROSS-SECTION SPECIMENS FOR TRANSMISSION ELECTRON-MICROSCOPY
BRAVMAN, JC
SINCLAIR, R
[J]. JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE, 1984, 1 (01): : 53 - 61
[3] EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY
GOMYO, A
SUZUKI, T
KOBAYASHI, K
KAWATA, S
HINO, I
YUASA, T
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (11) : 673 - 675
[4] OBSERVATION OF STRONG ORDERING IN GAXIN1-XP ALLOY SEMICONDUCTORS
GOMYO, A
SUZUKI, T
IIJIMA, S
[J]. PHYSICAL REVIEW LETTERS, 1988, 60 (25) : 2645 - 2648
[5] NONEXISTENCE OF LONG-RANGE ORDER IN GA0.5IN0.5P EPITAXIAL LAYERS GROWN ON (111)B AND (110) GAAS SUBSTRATES
GOMYO, A
SUZUKI, T
IIJIMA, S
HOTTA, H
FUJII, H
KAWATA, S
KOBAYASHI, K
UENO, Y
HINO, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12): : L2370 - L2372
[6] ORDERING IN GAAS1-XSBX GROWN BY MOLECULAR-BEAM EPITAXY
IHM, YE
OTSUKA, N
KLEM, J
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (24) : 2013 - 2015
[7] THE KINETIC ASPECTS OF ORDERING IN GAAS1-XSBX GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
JEN, HR
JOU, MJ
CHERNG, YT
STRINGFELLOW, GB
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 85 (1-2) : 175 - 181
[8] ORDERED STRUCTURES IN GAAS0.5SB0.5 ALLOYS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
JEN, HR
CHERNG, MJ
STRINGFELLOW, GB
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1603 - 1605
[9] ORDERED STRUCTURE IN OMVPE-GROWN GA0.5IN0.5P
KONDOW, M
KAKIBAYASHI, H
MINAGAWA, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 88 (02) : 291 - 296
[10] ORDERED STRUCTURE IN GA0.7IN0.3P ALLOY
KONDOW, M
KAKIBAYASHI, H
TANAKA, T
MINAGAWA, S
[J]. PHYSICAL REVIEW LETTERS, 1989, 63 (08) : 884 - 886

← 1 2 3 →