Accurate pattern registration for integrated circuit tomography

被引:5
作者
Levine, ZH [1 ]
Grantham, S
Neogi, S
Frigo, SP
McNulty, I
Retsch, CC
Wang, YX
Lucatorto, TB
机构
[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA
[2] Rensselaer Polytech Inst, Troy, NY 12180 USA
[3] Intel Corp, Components TD Q&R MAT FA, Hillsboro, OR 97124 USA
[4] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA
关键词
D O I
10.1063/1.1381541
中图分类号
O59 [应用物理学];
学科分类号
摘要
As part of an effort to develop high resolution microtomography for engineered structures, a two-level copper integrated circuit interconnect was imaged using 1.83 keV x rays at 14 angles employing a full-field Fresnel zone plate microscope. A major requirement for high resolution microtomography is the accurate registration of the reference axes in each of the many views needed for a reconstruction. A reconstruction with 100 nm resolution would require registration accuracy of 30 nm or better. This work demonstrates that even images that have strong interference fringes can be used to obtain accurate fiducials through the use of Radon transforms. We show that we are able to locate the coordinates of the rectilinear circuit patterns to 28 nm. The procedure is validated by agreement between an x-ray parallax measurement of 1.41 +/-0.17 mum and a measurement of 1.58 +/-0.08 mum from a scanning electron microscope image of a cross section. (C) 2001 American Institute of Physics.
引用
收藏
页码:556 / 560
页数:5
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