Wetting and bonding of Ni-Si alloys on silicon carbide

被引：66

作者：

Rado, C ^{[1
]}

Kalogeropoulou, S ^{[1
]}

Eustathopoulos, N ^{[1
]}

机构：

[1] Ecole Natl Super Electrochim & Electrome Grenoble, Thermodynam & Physicochim Met Lab, UA 29 CNRS, F-38402 St Martin Dheres, France

来源：

ACTA MATERIALIA | 1999年 / 47卷 / 02期

关键词：

D O I：

10.1016/S1359-6454(98)00374-7

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

Wetting (contact angles) and bonding (work of adhesion) of non-reactive binary Ni-Si alloys on basal planes of alpha-SiC are studied by the sessile drop technique under high vacuum at 1633 K. The analysis of the experimental results by the Gibbs adsorption equation and by a statistical thermodynamic model allows the role of each component of the alloy on the interfacial energies of the system and on bonding to be determined. (C) 1999 Acta Metallurgica Inc. Published by Elsevier Science Ltd. All rights reserved.

引用

页码：461 / 473

页数：13

共 48 条

[1]

ANMEY S, 1986, Z METALLKD, V77, P805

[2]

Bakovets V. V., 1977, Soviet Physics - Crystallography, V22, P125

[3]

BRAZING OF PRESSURELESS-SINTERED SIC USING AG-CU-TI ALLOY [J].