Thermally induced stress in GaN layers with regard to film coalescence

被引：20

作者：

Einfeldt, S ^{[1
]}

Böttcher, T ^{[1
]}

Figge, S ^{[1
]}

Hommel, D ^{[1
]}

机构：

[1] Univ Bremen, Inst Solid State Phys, D-28334 Bremen, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 230卷 / 3-4期

关键词：

stresses; surface structure; metal organic vapor phase epitaxy; nitrides;

D O I：

10.1016/S0022-0248(01)01290-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Thermally induced plane stress in GaN layers of different thicknesses, grown by metalorganic vapour phase epitaxy on sapphire, is investigated. Thin layers, characterized by isolated grains, are found to be stress-free. With increasing layer thickness, however, grains start to coalesce and stress can build up when the samples are cooled down following growth. As soon as the coalescence process is completed and a compact film has been formed, a maximum stress level is reached which does not further increase for still thicker layers. Therefore, it is proposed that grain edges enable non-compact films to elastically relieve in-plane stress. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：357 / 360

页数：4

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