Analysis of tunnel current through ultrathin gate oxides

被引：53

作者：

Fukuda, M ^{[1
]}

Mizubayashi, W ^{[1
]}

Kohno, A ^{[1
]}

Miyazaki, S ^{[1
]}

Hirose, M ^{[1
]}

机构：

[1] Hiroshima Univ, Dept Elect Engn, Higashihiroshima 7398527, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1998年 / 37卷 / 12B期

关键词：

tunnel current; gate oxide; Fowler-Nordheim tunneling; direct tunneling;

D O I：

10.1143/JJAP.37.L1534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tunnel current through 1.27-8.12-nm-thick gate oxides has been calculated on the basis of multiple-scattering theory, in which the SiO(2) layer is segmented into multiple rectangular potential barriers. By using the conduction band barrier height of 3.34 eV determined for the SiO(2)/Si(100) interfaces, a tunneling effective mass of 0.35m(0) is obtained so as to reproduce the SiO(2) thickness dependence on the direct tunnel current. The Fowler-Nordheim tunnel current oscillation due to interference between the propagating electron wave at the SiO(2) conduction band and the wave reflected at the Sio(2)/Si interface has also been explained by employing an oxide conduction band effective mass of 0.60m(0.) It is found that the oxide thicknesses determined by ellipsometry are in good agreement with those extracted by fitting the measured tunnel current to theoretical one.

引用

页码：L1534 / L1536

页数：3

共 16 条

[1] The valence band alignment at ultrathin SiO2/Si interfaces
Alay, JL
Hirose, M
[J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (03) : 1606 - 1608
[2] Direct extraction of the electron tunneling effective mass in ultrathin SiO2
Brar, B
Wilk, GD
Seabaugh, AC
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (18) : 2728 - 2730
[3] TUNNEL OXIDES GROWN BY RAPID THERMAL-OXIDATION
DEPAS, M
VANMEIRHAEGHE, RL
LAFLERE, WH
CARDON, F
[J]. MICROELECTRONIC ENGINEERING, 1993, 22 (1-4) : 61 - 64
[4] Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices
Gupta, A
Fang, P
Song, M
Lin, MR
Wollesen, D
Chen, K
Hu, CM
[J]. IEEE ELECTRON DEVICE LETTERS, 1997, 18 (12) : 580 - 582
[5] A NEW APPROACH TO ONE-DIMENSIONAL SCATTERING
KALOTAS, TM
LEE, AR
[J]. AMERICAN JOURNAL OF PHYSICS, 1991, 59 (01) : 48 - 52
[6] KHAIRURRIJAL S, 1997, JPN J APPL PHYS, V36, pL1541
[7] Lo SH, 1997, 1997 SYMPOSIUM ON VLSI TECHNOLOGY, P149, DOI 10.1109/VLSIT.1997.623742
[8] OPTICAL DETERMINATION OF MOBILITY AND CARRIER CONCENTRATION IN HEAVILY DOPED POLYCRYSTALLINE SILICON
MISHIMA, Y
HIROSE, M
OSAKA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1157 - 1159
[9] Structure and electronic states of ultrathin SiO2 thermally grown on Si(100) and Si(111) surfaces
Miyazaki, S
Nishimura, H
Fukuda, M
Ley, L
Ristein, J
[J]. APPLIED SURFACE SCIENCE, 1997, 113 : 585 - 589
[10] MOMOSE HS, 1994, INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST, P593, DOI 10.1109/IEDM.1994.383340

← 1 2 →