Peculiarities of (InxGa1-x)2Se3 single crystal oxidation

被引：7

作者：

Balitskii, OA ^{[1
]}

Savchyn, VP ^{[1
]}

Lupshak, PP ^{[1
]}

Fiyala, YM ^{[1
]}

机构：

[1] Lviv Ivan Franko Natl Univ, Dept Phys, UA-79005 Lvov, Ukraine

来源：

MATERIALS LETTERS | 2001年 / 51卷 / 01期

关键词：

III-VI compound; indium-gallium selenide; porous structure; In2O3; phase formation;

D O I：

10.1016/S0167-577X(01)00259-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The experimental investigations on thermally oxidized indium-gallium selenide (InxGa1-x)(2)Se-3 were conducted. It was established that the oxidation of the (InxGa1-x)(2)Se-3 involves the fort-nation of cubic indium oxide as well as noncrystalline gallium oxide. This amorphous phase has a porous structure with the pore sizes about 0.05-0.4 mum(2), depending on the temperature of treatment. Additional annealing of the oxidized samples at high temperature leads to the formation of the monoclinic beta-(Ga1-xInx)(2)O-3. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：27 / 31

页数：5

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